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协议学习:ddr:ddr3_to_ddr4 [2022/12/27 08:57] – 创建 zhangguo协议学习:ddr:ddr3_to_ddr4 [2026/10/13 22:45] (当前版本) – 外部编辑 127.0.0.1
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-====== DDR3 to DDR4 ======+# DDR3 to DDR4 
 +https://www.micron.com/products/dram/ddr3-to-ddr4
  
 DDR4 – Advantages of Migrating from DDR3 DDR4 – Advantages of Migrating from DDR3
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 DDR4 is the next evolution in DRAM, bringing even higher performance and more robust control features while improving energy economy for enterprise, micro-server, tablet, and ultrathin client applications. The following table compares some of the key feature differences between DDR3 and DDR4. DDR4 is the next evolution in DRAM, bringing even higher performance and more robust control features while improving energy economy for enterprise, micro-server, tablet, and ultrathin client applications. The following table compares some of the key feature differences between DDR3 and DDR4.
  
-^ Feature/Option                ^ DDR3                                ^ DDR4                                 ^ DDR4 Advantage                                                    ^ + 
-|  Voltage (core and I/O)       |  1.5V                               |  1.2V                                |  Reduces memory power demand                                      | +| Feature/Option | DDR3 | DDR4 | DDR4 Advantage | 
-|  VREF inputs                  |  2 – DQs and CMD/ADDR               |  1 – CMD/ADDR                        |  VREFDQ now internal                                              | +| --- | --- | --- | --- | 
-|  Low voltage standard         |  Yes (DDR3L at 1.35V)               |  No                                  |  Memory power reductions                                          | +| Voltage (core and I/O) | 1.5V | 1.2V | Reduces memory power demand | 
-|  Data rate (Mb/s)             |  800, 1066, 1333, 1600, 1866, 2133  |  1600, 1866, 2133, 2400, 2666, 3200  |  Migration to higher‐speed I/O                                    | +| VREF inputs | 2 – DQs and CMD/ADDR | 1 – CMD/ADDR | VREFDQ now internal | 
-|  Densities                    |  512Mb–8Gb                          |  2Gb–16Gb                            |  Better enablement for large-capacity memory subsystems           | +| Low voltage standard | Yes (DDR3L at 1.35V) | No | Memory power reductions | 
-|  Internal banks               |  8                                  |  16                                  |  More banks                                                       | +| Data rate (Mb/s) | 800, 1066, 1333, 1600, 1866, 2133 | 1600, 1866, 2133, 2400, 2666, 3200 | Migration to higher‐speed I/O | 
-|  Bank groups (BG)             |  0                                  |  4                                   |  Faster burst accesses                                            | +| Densities | 512Mb–8Gb | 2Gb–16Gb | Better enablement for large-capacity memory subsystems | 
-|  tCK – DLL enabled            |  300 MHz to 800 MHz                 |  667 MHz to 1.6 GHz                  |  Higher data rates                                                | +| Internal banks | 8 | 16 | More banks | 
-| t CK – DLL disabled           |  10 MHz to 125 MHz (optional)       |  Undefined to 125 MHz                |  DLL-off now fully supported                                      | +| Bank groups (BG) | 0 | 4 | Faster burst accesses | 
-|  Read latency                 |  AL + CL                            |  AL + CL                             |  Expanded values                                                  | +| tCK – DLL enabled | 300 MHz to 800 MHz | 667 MHz to 1.6 GHz | Higher data rates | 
-|  Write latency                |  AL + CWL                           |  AL + CWL                            |  Expanded values                                                  | +| t CK – DLL disabled | 10 MHz to 125 MHz (optional) | Undefined to 125 MHz | DLL-off now fully supported | 
-|  DQ driver (ALT)              |  40Ω                                |  48Ω                                 |  Optimized for PtP (point-to-point) applications                  | +| Read latency | AL + CL | AL + CL | Expanded values | 
-|  DQ bus                       |  SSTL15                             |  POD12                               |  Mitigate I/O noise and power                                     | +| Write latency | AL + CWL | AL + CWL | Expanded values | 
-|  RTT values (in Ω)            |  120, 60, 40, 30, 20                |  240, 120, 80, 60, 48, 40, 34        |  Support higher data rates                                        | +| DQ driver (ALT) | 40Ω | 48Ω | Optimized for PtP (point-to-point) applications | 
-|  RTT not allowed              |  READ bursts                        |  Disables during READ bursts         |  Ease-of-use                                                      | +| DQ bus | SSTL15 | POD12 | Mitigate I/O noise and power | 
-|  ODT modes                    |  Nominal, dynamic                   |  Nominal, dynamic, park              |  Additional control mode; supports OTF value change               | +| RTT values (in Ω) | 120, 60, 40, 30, 20 | 240, 120, 80, 60, 48, 40, 34 | Support higher data rates | 
-|  ODT control                  |  ODT signaling required             |  ODT signaling not required          |  Ease of ODT control, allows non-ODT routing on PtP applications  | +| RTT not allowed | READ bursts | Disables during READ bursts | Ease-of-use | 
-|  Multipurpose register (MPR)  |  Four registers – 1 defined, 3 RFU  |  Four registers – 3 defined, 1 RFU   |  Provides additional specialty readout                            |+| ODT modes | Nominal, dynamic | Nominal, dynamic, park | Additional control mode; supports OTF value change | 
 +| ODT control | ODT signaling required | ODT signaling not required | Ease of ODT control, allows non-ODT routing on PtP applications | 
 +| Multipurpose register (MPR) | Four registers – 1 defined, 3 RFU | Four registers – 3 defined, 1 RFU | Provides additional specialty readout | 
协议学习/ddr/ddr3_to_ddr4.1672102677.txt.gz · 最后更改: (外部编辑)

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